THE INFLUENCE OF ISOTHERMAL HYDROGEN ANNEALING ON ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE-SILICON FILMS

被引:2
作者
LU, CY
TSAI, NS
机构
关键词
D O I
10.1149/1.2108691
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:847 / 849
页数:3
相关论文
共 16 条
[1]   ELECTRICAL-CONDUCTION IN IMPLANTED POLYCRYSTALLINE SILICON [J].
ANDREWS, JM .
JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) :227-247
[2]   ENHANCED CONDUCTIVITY IN PLASMA-HYDROGENATED POLYSILICON FILMS [J].
CAMPBELL, DR .
APPLIED PHYSICS LETTERS, 1980, 36 (07) :604-606
[3]   HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].
KAMINS, TI .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4357-&
[4]   HYDROGENATION OF TRANSISTORS FABRICATED IN POLYCRYSTALLINE-SILICON FILMS [J].
KAMINS, TI ;
MARCOUX .
ELECTRON DEVICE LETTERS, 1980, 1 (08) :159-161
[5]   A CONDUCTION MODEL FOR SEMICONDUCTOR GRAIN-BOUNDARY SEMICONDUCTOR BARRIERS IN POLYCRYSTALLINE-SILICON FILMS [J].
LU, NC ;
GERZBERG, L ;
LU, CY ;
MEINDL, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) :137-149
[6]   MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS [J].
LU, NCC ;
GERZBERG, L ;
LU, CY ;
MEINDL, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :818-830
[7]   THE INFLUENCE OF HYDROGEN GAS ON THE CHARACTERISTICS OF AMORPHOUS-SILICON DEPOSITED BY RF SPUTTERING [J].
LUE, JT ;
MEYER, O ;
LOMBAARD, J ;
WANG, RH .
SOLID-STATE ELECTRONICS, 1982, 25 (10) :1011-1016
[8]   INFLUENCE OF PLASMA ANNEALING ON ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE SI [J].
MAKINO, T ;
NAKAMURA, H .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :551-552
[9]   DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J].
MANDURAH, MM ;
SARASWAT, KC ;
HELMS, CR ;
KAMINS, TI .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5755-5763
[10]  
MCKENNY VG, 1977, FEB IEEE ISSCC, P16