ORIGIN OF DEEP LEVELS IN THE DEPLETION REGION OF P-ZNTE/N+-CDTE HETEROJUNCTION DETERMINED BY DLTS

被引:7
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KHAN, MRH
SAJI, M
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10.1063/1.335325
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O59 [应用物理学];
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页码:4668 / 4671
页数:4
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共 6 条
[1]  
AVEN M, 1967, PHYSICS CHEM 2 6 COM, P604
[2]   TRAP DEPTH AT THE INTERFACE OF CDTE-ZNTE HETEROJUNCTIONS [J].
KHAN, MRH ;
KOYAMA, Y ;
SAJI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02) :223-229
[3]  
Lang D. V, 1979, THERMALLY STIMULATED
[4]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[5]   ADMITTANCE SPECTROSCOPY OF IMPURITY LEVELS IN SCHOTTKY BARRIERS [J].
LOSEE, DL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2204-2214
[6]   DLTS INVESTIGATION OF SOME II-VI-COMPOUNDS [J].
VERITY, D ;
BRYANT, FJ ;
SCOTT, CG ;
SHAW, D .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :234-239