ELLIPSOMETRIC STUDIES OF SILICON DIOXIDE FILMS ON SILICON

被引：1

作者：

YAGHMOUR, S ^{[1
]}

NEAL, WEJ ^{[1
]}

机构：

[1] UNIV ASTON,DEPT MATH & PHYS,BIRMINGHAM B4 7ET,W MIDLANDS,ENGLAND

来源：

SURFACE TECHNOLOGY | 1985年 / 25卷 / 04期

关键词：

D O I：

10.1016/0376-4583(85)90081-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：297 / 305

页数：9

共 18 条

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