HIGH-FIELD ELECTRON-DRIFT IN A-SI-H

被引：8

作者：

ANTONIADIS, H

DEVLEN, RI

ESIPOV, S

GUHA, S

SCHIFF, EA

TAUC, J

机构：

[1] ACAD SCI USSR,INST SOLID STATE PHYS,CHERNOGOLOVKA 142432,USSR

[2] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

[3] UNIV ILLINOIS,LOOMIS LAB PHYS,URBANA,IL 61801

[4] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

[5] UNITED SOLAR SYST INC,TROY,MI 48084

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80141-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Recent high-field measurements of electron drift velocities in hydrogenated amorphous silicon (a-Si:H) are surveyed. The electron drift-mobility depends essentially exponentially upon electric field above 90 K; the characteristic field E0 of the nonlinearity increases approximately linearly with temperature. Models for these high-field measurements are discussed.

引用

页码：407 / 410

页数：4

共 15 条

[1] NONLINEAR PHOTOCARRIER DRIFT IN HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS [J].