MODELING OF THE FORMATION OF RUO2 THIN-FILM FROM RU(C5H5)(2) BY METAL-ORGANIC CHEMICAL-VAPOR DECOMPOSITION

被引：8

作者：

MAR, SY

HUANG, YS

TIONG, KK

机构：

[1] NATL TAIWAN INST TECHNOL,DEPT ELECTR ENGN,TAIPEI 106,TAIWAN

[2] NATL TAIWAN OCEAN UNIV,DEPT ELECTR ENGN,CHILUNG 202,TAIWAN

来源：

THIN SOLID FILMS | 1995年 / 258卷 / 1-2期

关键词：

DEPOSITION PROCESS; ORGANOMETALLIC VAPOR DEPOSITION; OXIDES; RUTHENIUM;

D O I：

10.1016/0040-6090(94)06368-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A modeling technique based on bond graph methods is used to analyze the mechanism of metal-organic chemical vapor deposition processes of RuO2 by Ru(C5H5)(2). Theoretical models are considered and compared with experimental data. The most suitable model, which incorporates both the homogeneous gas-phase reactions and the heterogeneous surface processes, is constructed. The proposed model agreed well with the experimental data. The model indicates that besides a single-surface reaction there exists a gas-phase reaction which is the rate-controlling step. The surface deposition rate constant as well as the forward and backward reaction rate constants for the gas-phase reversible reaction of Ru(C5H5)(2) are also determined.

引用

页码：104 / 109

页数：6

共 12 条

[1] CONTINUOUS FLOW SYSTEMS - DISTRIBUTION OF RESIDENCE TIMES [J].