CHEMICAL VAPOR-DEPOSITION OF RUTHENIUM AND RUTHENIUM DIOXIDE FILMS

[1] AUGIS GA, 1978, IEEE T COMP HYB MAN, V1, P46

[2] Brandes E.A., 1983, SMITHELLS METALS REF

[3] ELECTRONIC-STRUCTURE OF RUO2 FILMS [J]. THIN SOLID FILMS, 1982, 92 (04) : 323 - 326

[4] Crosby J. N., 1981, U. S. patent, Patent No. [4,250,210, 4250210]

[5] DAVIS LE, 1978, HDB AUGER ELECTRON S

[6] PRODUCTS FROM PYROLYSIS OF RU3 (CO)12 AND OS3 (CO)12 [J]. JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1972, 37 (02) : C39 - &

[7] FRASER DB, 1983, VLSI TECHNOLOGY, pCH9

[8] GARGINI PA, 1983, RES DEV, V25, P141

[9] STRUCTURE OF SELECTIVE LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1243 - 1250

[10] LANAM RD, 1984, RES DEV, P102

[1] AUGIS GA, 1978, IEEE T COMP HYB MAN, V1, P46

[2] Brandes E.A., 1983, SMITHELLS METALS REF

[3] ELECTRONIC-STRUCTURE OF RUO2 FILMS [J]. THIN SOLID FILMS, 1982, 92 (04) : 323 - 326

[4] Crosby J. N., 1981, U. S. patent, Patent No. [4,250,210, 4250210]

[5] DAVIS LE, 1978, HDB AUGER ELECTRON S

[6] PRODUCTS FROM PYROLYSIS OF RU3 (CO)12 AND OS3 (CO)12 [J]. JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1972, 37 (02) : C39 - &

[7] FRASER DB, 1983, VLSI TECHNOLOGY, pCH9

[8] GARGINI PA, 1983, RES DEV, V25, P141

[9] STRUCTURE OF SELECTIVE LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1243 - 1250

[10] LANAM RD, 1984, RES DEV, P102