STRUCTURAL TRANSFORMATIONS AND DEFECT PRODUCTION IN ION-IMPLANTED SILICON - A MOLECULAR-DYNAMICS SIMULATION STUDY

被引:186
作者
DELARUBIA, TD [1 ]
GILMER, GH [1 ]
机构
[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
关键词
D O I
10.1103/PhysRevLett.74.2507
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have simulated collisions of 5 keV silicon atoms with a silicon substrate. At this energy the simulation provides an atomistic description of the evolution of the displacement cascade. We discuss the structural changes occurring as the cascade regions transform from crystalline to liquid to amorphous phases. We compare the structure of the amorphous material with that of rapidly quenched liquid silicon. We also discuss the time evolution of the stress, kinetic and potential energies, and atomic density. An assessment of defect production mechanisms is made. © 1995 The American Physical Society.
引用
收藏
页码:2507 / 2510
页数:4
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