STRUCTURAL TRANSFORMATIONS AND DEFECT PRODUCTION IN ION-IMPLANTED SILICON - A MOLECULAR-DYNAMICS SIMULATION STUDY

被引：186

作者：

DELARUBIA, TD ^{[1
]}

GILMER, GH ^{[1
]}

机构：

[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.74.2507

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have simulated collisions of 5 keV silicon atoms with a silicon substrate. At this energy the simulation provides an atomistic description of the evolution of the displacement cascade. We discuss the structural changes occurring as the cascade regions transform from crystalline to liquid to amorphous phases. We compare the structure of the amorphous material with that of rapidly quenched liquid silicon. We also discuss the time evolution of the stress, kinetic and potential energies, and atomic density. An assessment of defect production mechanisms is made. © 1995 The American Physical Society.

引用

页码：2507 / 2510

页数：4

共 20 条

[1]

Allen M.P., 1987, COMPUTER SIMULATION

[2]

ANTONIADIS DA, 1986, IEEE J SOLID-ST CIRC, V14, P412

[3] DEFECTS PRODUCTION AND ANNEALING IN SELF-IMPLANTED SI [J].