RESPONSE OF A MATERIAL - FROM SINGLE IONS TO EXPERIMENTAL TIMES AND FLUENCES

被引:5
作者
BROWN, WL [1 ]
OURMAZD, A [1 ]
机构
[1] AT&T BELL LABS,MICROPHYS RES DEPT,MURRAY HILL,NJ 07974
关键词
D O I
10.1557/S0883769400041439
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:30 / 33
页数:4
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共 21 条
[1]   MOBILITY OF RADIATION-INDUCED DEFECTS IN GERMANIUM [J].
BARUCH, P .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) :653-&
[2]   INTERACTION OF ENERGETIC IONS WITH INHOMOGENEOUS SOLIDS [J].
BODE, M ;
OURMAZD, A ;
CUNNINGHAM, J ;
HONG, M .
PHYSICAL REVIEW LETTERS, 1991, 67 (07) :843-846
[3]   ELECTRON-PARAMAGNETIC RESONANCE OF LATTICE DAMAGE IN OXYGEN-IMPLANTED SILICON [J].
BROWER, KL ;
BEEZHOLD, W .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3499-&
[4]  
Davies J. A., 1984, Ion implantation and beam processing, P81
[5]   MOLECULAR-DYNAMICS SIMULATION OF DISPLACEMENT CASCADES IN CU AND NI - THERMAL SPIKE BEHAVIOR [J].
DELARUBIA, TD ;
AVERBACK, RS ;
HSIEH, H ;
BENEDEK, R .
JOURNAL OF MATERIALS RESEARCH, 1989, 4 (03) :579-586
[6]   HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J].
DONOVAN, EP ;
SPAEPEN, F ;
TURNBULL, D ;
POATE, JM ;
JACOBSON, DC .
APPLIED PHYSICS LETTERS, 1983, 42 (08) :698-700
[7]   COMPARATIVE-STUDY OF IMPLANTATION-INDUCED DAMAGE IN GAAS AND GE - TEMPERATURE AND FLUX DEPENDENCE [J].
HAYNES, TE ;
HOLLAND, OW .
APPLIED PHYSICS LETTERS, 1991, 59 (04) :452-454
[8]   FEATURES OF COLLISION CASCADES IN SILICON AS DETERMINED BY TRANSMISSION ELECTRON-MICROSCOPY [J].
HOWE, LM ;
RAINVILLE, MH .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :143-151
[9]  
Lark-Horovitz K., P47
[10]   RAPID ANNEALING AND THE ANOMALOUS DIFFUSION OF ION-IMPLANTED BORON INTO SILICON [J].
MICHEL, AE ;
RAUSCH, W ;
RONSHEIM, PA ;
KASTL, RH .
APPLIED PHYSICS LETTERS, 1987, 50 (07) :416-418