COMPARATIVE-STUDY OF IMPLANTATION-INDUCED DAMAGE IN GAAS AND GE - TEMPERATURE AND FLUX DEPENDENCE

被引：71

作者：

HAYNES, TE

HOLLAND, OW

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 04期

关键词：

D O I：

10.1063/1.105460

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Damage accumulation during ion implantation of 100 keV Si+ into GaAs and Ge has been investigated. A comparison is made of the amount of damage created in GaAs and Ge and its dependence on dose, temperature, and dose rate. General similarities are observed in the dependence of damage in the two materials on dose and temperature. Both materials exhibit a well-defined transition temperature above which the damage decreases dramatically. This transition occurs near room temperature in GaAs and approximately 112-degrees-C higher in Ge. Furthermore, a strong dose-rate effect on damage growth is demonstrated in both Ge and GaAs near their respective transition temperatures. The temperature dependence of the damage yield in both materials is compared to that given by the model of Morehead and Crowder [Rad. Eff. 6, 27 (1970)] for a range of ion doses.

引用

页码：452 / 454

页数：3

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