THE INFLUENCE OF DOSE-RATE AND ANALYSIS PROCEDURES ON MEASURED DAMAGE IN P+ ION-IMPLANTED GAAS

被引：16

作者：

CARTER, G ^{[1
]}

NOBES, MJ ^{[1
]}

TASHLYKOV, IS ^{[1
]}

机构：

[1] UNIV SALFORD,THIN FILM & SURFACE RES CTR,SALFORD M5 4WT,LANCS,ENGLAND

来源：

RADIATION EFFECTS LETTERS | 1984年 / 85卷 / 01期

关键词：

D O I：

10.1080/01422448408209676

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：37 / 43

页数：7

共 8 条

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[2] FLUX, FLUENCE AND IMPLANTATION TEMPERATURE-DEPENDENCE OF DISORDER PRODUCED BY 40 KEV N+ ION IRRADIATION OF GAAS
AHMED, NAG
CHRISTODOULIDES, CE
CARTER, G
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 52 (3-4): : 211 - 224
[3] DAVIES JA, 1982, FIZIKA TECHNICA POLU, V16, P577
[4] DAMAGE AND REORDERING OF ION-IMPLANTED LAYERS OF INP
KENNEDY, EF
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 375 - 377
[5] SLATER M, 1984, UNPUB RAD EFFECTS
[6] DISORDER PRODUCTION IN ION-IMPLANTED GALLIUM-ARSENIDE AT 40-K
STEVANOVIC, DV
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IBRAHIM, AM
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[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 71 (1-2): : 95 - 107
[7] DISORDER DEPENDENCE OF ION-IMPLANTED GAAS ON THE TYPE OF ION
TASHLYKOV, IS
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 203 (1-3): : 523 - 526
[8] ANNEALING STUDIES OF ION-IMPLANTED GAAS IN THE 40-300-K RANGE
TOGNETTI, NP
CARTER, G
STEVANOVIC, DV
THOMPSON, DA
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 66 (1-2): : 15 - 20