DAMAGE AND REORDERING OF ION-IMPLANTED LAYERS OF INP

被引：47

作者：

KENNEDY, EF

机构：

来源：

关键词：

D O I：

10.1063/1.92343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：375 / 377

页数：3

共 9 条

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SIGMON, TW
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[3] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS
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KULLEN, RP
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SIGMON, TW
[J]. SOLID STATE COMMUNICATIONS, 1977, 21 (11) : 1019 - 1021
[4] COMPENSATION FROM IMPLANTATION DAMAGE IN INP
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[5] BERYLLIUM-ION IMPLANTATION IN INP AND IN1-XGAXASYP1-Y
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ARMIENTO, CA
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 96 - 99
[6] ION-IMPLANTATION IN III-V COMPOUNDS
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[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 99 - 115
[7] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS
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INADA, T
MAYER, JW
EISEN, FH
RHODES, CG
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 85 - 89
[8] CRITICAL IMPLANTATION TEMPERATURE AND ANNEALING OF INDIUM-PHOSPHIDE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 968 - 969
[9] Ziegler J. F., 1974, Atomic Data and Nuclear Data Tables, V13, P463, DOI 10.1016/0092-640X(74)90009-6