CRITICAL IMPLANTATION TEMPERATURE AND ANNEALING OF INDIUM-PHOSPHIDE

被引：24

作者：

ROTHEMUND, W

FRITZSCHE, CR

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.570126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：968 / 969

页数：2

共 7 条

[1]

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[3] IMPLANTATION TEMPERATURE FOR III-V-COMPOUND SEMICONDUCTORS [J].

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NAMBA, S ;

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[4]

MATSUMURA H, 1975, ION IMPLANTATION SEM, P125

[5] RADIATION-DAMAGE IN ION-IMPLANTED GAP AND GAAS0.6P0.4 [J].

ROTHEMUND, W ;

FRITZSCHE, CR .

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[6] INVESTIGATION OF ION-IMPLANTED LAYERS BY SCANNING ELECTRON-MICROSCOPY [J].

ROTHEMUND, W ;

FRITZSCHE, CR .

APPLIED PHYSICS, 1976, 10 (02) :111-119

[7] LATTICE SITE LOCATION OF CADMIUM AND TELLURIUM IMPLANTED IN GALLIUM-ARSENIDE [J].

TAKAI, M ;

GAMO, K ;

MASUDA, K ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (12) :1935-1941

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