LATTICE SITE LOCATION OF CADMIUM AND TELLURIUM IMPLANTED IN GALLIUM-ARSENIDE

被引：22

作者：

TAKAI, M ^{[1
]}

GAMO, K ^{[1
]}

MASUDA, K ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,DEPT ELECT ENGN,OSAKA,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 12期

关键词：

D O I：

10.1143/JJAP.14.1935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1935 / 1941

页数：7

共 15 条

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PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 12 (01) :K9-&

[2] ANNEALING CHARACTERISTICS AND LATTICE SITE LOCATION OF 40 KEV SN IMPLANTATIONS IN GAAS [J].

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ANDERSEN, SL ;

OLSEN, T .

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[3]

GAMO K, 1975, 4TH P INT C ION IMPL, P35

[4]

GAMO K, 1973, 4TH P C SOL STAT DEV, V42, P130

[5] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J].

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MAYER, JW ;

EISEN, FH ;

HASKELL, JD ;

WELCH, B ;

PASHLEY, RD .

APPLIED PHYSICS LETTERS, 1972, 21 (12) :601-&

[6]

Heckingbottom R., 1973, RADIAT EFF, V17, P31

[7] ELECTRICAL PROPERTIES OF ZINC AND CADMIUM ION IMPLANTED LAYERS IN GALLIUM ARSENIDE [J].

HUNSPERG.RG ;

MARSH, OJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) :488-&

[8] GAAS FIELD-EFFECT TRANSISTORS WITH ION-IMPLANTED CHANNELS [J].

HUNSPERGER, RG ;

HIRSCH, N .

ELECTRONICS LETTERS, 1973, 9 (25) :577-578

[9]

HUNSPERGER RG, 1970, P EUROPEAN C ION IMP, P247

[10] CADMIUM IMPLANTED GALLIUM ARSENIDE - A STUDY OF RESIDUAL BOMBARDMENT DISORDER AND ATOM LOCATION. [J].

Ilic, G. ;

Ewan, G.T. ;

Whitton, J.L. .

1600, (18) :1-2

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