INVESTIGATION OF RADIATION-DAMAGE BY ELECTRON-BEAM ABSORPTION-MEASUREMENTS

[1] DAVIDSON SM, 1971, ION IMPLANTATION, P51

[2] AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04): : 219 - 225

[3] SIMPLE METHOD FOR CALCULATION OF ENERGY DEPOSITION PROFILES FROM RANGE DATA OF IMPLANTED IONS [J]. APPLIED PHYSICS, 1977, 12 (04): : 347 - 353

[4] GIBBONS JF, 1975, PROJECTED RANGE STAT

[5] JAKOBUS T, 1977, VERH DTSCH PHYSIKAL, V12, P161

[6] Kimerling L. C., 1975, Lattice Defects in Semiconductors, 1974, P126

[7] REIMER L, 1973, RASTER ELEKTRONENMIK

[8] INVESTIGATION OF ION-IMPLANTED LAYERS BY SCANNING ELECTRON-MICROSCOPY [J]. APPLIED PHYSICS, 1976, 10 (02): : 111 - 119

[9] ROTHEMUND W, UNPUBLISHED

[1] DAVIDSON SM, 1971, ION IMPLANTATION, P51

[2] AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04): : 219 - 225

[3] SIMPLE METHOD FOR CALCULATION OF ENERGY DEPOSITION PROFILES FROM RANGE DATA OF IMPLANTED IONS [J]. APPLIED PHYSICS, 1977, 12 (04): : 347 - 353

[4] GIBBONS JF, 1975, PROJECTED RANGE STAT

[5] JAKOBUS T, 1977, VERH DTSCH PHYSIKAL, V12, P161

[6] Kimerling L. C., 1975, Lattice Defects in Semiconductors, 1974, P126

[7] REIMER L, 1973, RASTER ELEKTRONENMIK

[8] INVESTIGATION OF ION-IMPLANTED LAYERS BY SCANNING ELECTRON-MICROSCOPY [J]. APPLIED PHYSICS, 1976, 10 (02): : 111 - 119

[9] ROTHEMUND W, UNPUBLISHED