共 28 条
[1]
APPLICATION OF LOW-ANGLE RUTHERFORD BACKSCATTERING AND CHANNELING TECHNIQUES TO DETERMINE IMPLANTATION INDUCED DISORDER PROFILE DISTRIBUTIONS IN SEMICONDUCTORS
[J].
NUCLEAR INSTRUMENTS & METHODS,
1980, 168 (1-3)
:283-288
[3]
BICKNELL R, 1977, PHYS STAT SOL A, V12, pK9
[4]
BRAGG WH, 1905, PHIL MAG, V10, P5218
[5]
ACCUMULATION OF AMORPHOUSNESS AS A FUNCTION OF IRRADIATION FLUENCE IN A COMPOSITE MODEL OF DISORDER PRODUCTION
[J].
RADIATION EFFECTS LETTERS,
1979, 43 (01)
:19-24
[6]
Carter G., 1970, Radiation Effects, V6, P277, DOI 10.1080/00337577008236307
[7]
CHADDERTON LT, 1970, RADIAT EFF, V8, P77
[8]
AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION
[J].
RADIATION EFFECTS AND DEFECTS IN SOLIDS,
1976, 30 (04)
:219-225
[9]
EISEN EF, 1973, CHANELLING, P415
[10]
Eisen F. H., 1971, Radiation Effects, V7, P143, DOI 10.1080/00337577108232575