FLUX, FLUENCE AND IMPLANTATION TEMPERATURE-DEPENDENCE OF DISORDER PRODUCED BY 40 KEV N+ ION IRRADIATION OF GAAS

被引：29

作者：

AHMED, NAG

CHRISTODOULIDES, CE

CARTER, G

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 52卷 / 3-4期

关键词：

D O I：

10.1080/00337578008210034

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：211 / 224

页数：14

共 28 条

[1] APPLICATION OF LOW-ANGLE RUTHERFORD BACKSCATTERING AND CHANNELING TECHNIQUES TO DETERMINE IMPLANTATION INDUCED DISORDER PROFILE DISTRIBUTIONS IN SEMICONDUCTORS [J].

AHMED, NAG ;

CHRISTODOULIDES, CE ;

CARTER, G ;

NOBES, MJ ;

TITOV, AI .

NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3) :283-288

[2] FLUX AND FLUENCE DEPENDENCE OF IMPLANTATION DISORDER IN GAAS SUBSTRATES [J].

ANDERSON, WJ ;

PARK, YS .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (08) :4568-4570

[3]

BICKNELL R, 1977, PHYS STAT SOL A, V12, pK9

[4]

BRAGG WH, 1905, PHIL MAG, V10, P5218

[5] ACCUMULATION OF AMORPHOUSNESS AS A FUNCTION OF IRRADIATION FLUENCE IN A COMPOSITE MODEL OF DISORDER PRODUCTION [J].

CARTER, G ;

WEBB, R .

RADIATION EFFECTS LETTERS, 1979, 43 (01) :19-24

[6]

Carter G., 1970, Radiation Effects, V6, P277, DOI 10.1080/00337577008236307

[7]

CHADDERTON LT, 1970, RADIAT EFF, V8, P77

[8] AMORPHIZATION OF SILICON BY ION-IMPLANTATION - HOMOGENEOUS OR HETEROGENEOUS NUCLEATION [J].

DENNIS, JR ;

HALE, EB .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04) :219-225

[9]

EISEN EF, 1973, CHANELLING, P415

[10]

Eisen F. H., 1971, Radiation Effects, V7, P143, DOI 10.1080/00337577108232575

← 1 2 3 →