FLUX AND FLUENCE DEPENDENCE OF IMPLANTATION DISORDER IN GAAS SUBSTRATES

[1] ELECTROREFLECTANCE MEASUREMENTS OF LATTICE DAMAGE IN ION-IMPLANTED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3094 - 3098

[2] ELECTROREFLECTANCE MEASUREMENTS OF MELT-DOPED AND ION-IMPLANTED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3870 - 3875

[3] THERMAL AND INJECTION ANNEALING OF NEUTRON-IRRADIATED P-TYPE SILICON BETWEEN 76 DEGREES K AND 300 DEGREES K [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) : 28 - +

[4] EISEN FH, 1971, RAD EFF, V8, P143

[5] GIBBONS JF, 1975, PROJECTED RANGE STAT

[6] TRANSIENT ANNEALING OF DEFECTS IN IRRADIATED SILICON DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (09): : 1328 - +

[7] Hunsperger R. G., 1971, Radiation Effects, V9, P133, DOI 10.1080/00337577108242045

[8] LOWE LF, 1975, REV SCI INSTRUM, V46, P533

[9] DOSE-RATE EFFECTS IN INDIUM IMPLANTED GAAS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 23 (03): : 165 - 169

[10] Winterbon K. B., 1975, ION IMPLANTATION RAN

[1] ELECTROREFLECTANCE MEASUREMENTS OF LATTICE DAMAGE IN ION-IMPLANTED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) : 3094 - 3098

[2] ELECTROREFLECTANCE MEASUREMENTS OF MELT-DOPED AND ION-IMPLANTED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3870 - 3875

[3] THERMAL AND INJECTION ANNEALING OF NEUTRON-IRRADIATED P-TYPE SILICON BETWEEN 76 DEGREES K AND 300 DEGREES K [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) : 28 - +

[4] EISEN FH, 1971, RAD EFF, V8, P143

[5] GIBBONS JF, 1975, PROJECTED RANGE STAT

[6] TRANSIENT ANNEALING OF DEFECTS IN IRRADIATED SILICON DEVICES [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (09): : 1328 - +

[7] Hunsperger R. G., 1971, Radiation Effects, V9, P133, DOI 10.1080/00337577108242045

[8] LOWE LF, 1975, REV SCI INSTRUM, V46, P533

[9] DOSE-RATE EFFECTS IN INDIUM IMPLANTED GAAS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 23 (03): : 165 - 169

[10] Winterbon K. B., 1975, ION IMPLANTATION RAN