ELECTROREFLECTANCE MEASUREMENTS OF LATTICE DAMAGE IN ION-IMPLANTED GAAS

被引：5

作者：

ANDERSON, WJ ^{[1
]}

PARK, YS ^{[1
]}

机构：

[1] USAF, AVIONICS LAB, WRIGHT PATTERSON AFB, OH 45433 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.323057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3094 / 3098

页数：5

共 26 条

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[5]

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[6]

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[7]

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[8] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

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[9]

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[10] TRANSIENT ANNEALING OF DEFECTS IN IRRADIATED SILICON DEVICES [J].

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