TRANSIENT ANNEALING OF DEFECTS IN IRRADIATED SILICON DEVICES

被引：27

作者：

GREGORY, BL

SANDER, HH

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1970年 / 58卷 / 09期

关键词：

D O I：

10.1109/PROC.1970.7925

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1328 / +

共 65 条

[1] RAPID ANNEALING IN N-TYPE SILICON FOLLOWING PULSED 10 MEV ELECTRON IRRADIATION
ARIMURA, I
FREEMAN, RR
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) : 2570 - +
[2] BARNES CE, 1969, IEEE T NUCL SCI, VNS16, P28
[3] BARNETT B, 1967, PHYS FAIL ELECTRON, V5, P373
[4] INFLUENCE OF IMPURITIES ON CARRIER REMOVAL AND ANNEALING IN NEUTRON-IRRADIATED SILICON
BASS, RF
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 78 - +
[5] Bean A. R., 1970, Solid State Communications, V8, P175, DOI 10.1016/0038-1098(70)90074-8
[6] BERTOLOTTI M, 1968, RADIATION EFFECTS SE, P311
[7] BINDER D, 1966, TR6641 WEAP LAB TECH, P55
[8] BINDER D, 1968, IEEE T NUCL SCI, VNS15, P84
[9] RADIATION EFFECTS IN MATERIALS
BROOKS, H
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1118 - 1124
[10] ELECTRICAL STUDIES OF ELECTRON-IRRADIATED LITHIUM-CONTAINING N-TYPE SILICON
BRUCKER, GJ
[J]. PHYSICAL REVIEW, 1969, 183 (03): : 712 - +