TRANSIENT ANNEALING OF DEFECTS IN IRRADIATED SILICON DEVICES

[21] GOLDSTEIN B, 1965, NAS59131 CONTR

[22] Gregory B. L., 1970, Applied Physics Letters, V16, P67, DOI 10.1063/1.1653103

[23] INJECTION-STIMULATED VACANCY REORDERING IN P-TYPE SILICON AT 76DEGREESK [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3765 - &

[24] INJECTION DEPENDENCE OF TRANSIENT ANNEALING IN NEUTRON-IRRADIATED SILICON DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 116 - +

[25] GREGORY BL, 1969, IEEE T NUCL SCI, VNS16, P53

[26] GREGORY BL, 1968, RADIATION EFFECTS SE, P124

[27] GROVE AS, 1967, PHYS TECHNOL S, P187

[28] ANALYSIS OF RADIATION EFFECTS IN SEMICONDUCTOR JUNCTION DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 153 - +

[29] EFFECT OF IMPURITIES ON ANNEALING BEHAVIOR OF IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (06) : 2433 - &

[30] LARIN F, 1967, P RADIATION EFFECTS, V2, pB16

[21] GOLDSTEIN B, 1965, NAS59131 CONTR

[22] Gregory B. L., 1970, Applied Physics Letters, V16, P67, DOI 10.1063/1.1653103

[23] INJECTION-STIMULATED VACANCY REORDERING IN P-TYPE SILICON AT 76DEGREESK [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3765 - &

[24] INJECTION DEPENDENCE OF TRANSIENT ANNEALING IN NEUTRON-IRRADIATED SILICON DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 116 - +

[25] GREGORY BL, 1969, IEEE T NUCL SCI, VNS16, P53

[26] GREGORY BL, 1968, RADIATION EFFECTS SE, P124

[27] GROVE AS, 1967, PHYS TECHNOL S, P187

[28] ANALYSIS OF RADIATION EFFECTS IN SEMICONDUCTOR JUNCTION DEVICES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 153 - +

[29] EFFECT OF IMPURITIES ON ANNEALING BEHAVIOR OF IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (06) : 2433 - &

[30] LARIN F, 1967, P RADIATION EFFECTS, V2, pB16