TRANSIENT ANNEALING OF DEFECTS IN IRRADIATED SILICON DEVICES

[31] Lindhard J., 1963, KGL DANSKE VIDENSKAB, V33

[32] MACKAY JW, 1968, RADIATION EFFECTS SE, P175

[33] OBSERVATION OF ION BOMBARDMENT DAMAGE IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1968, 17 (150): : 1145 - &

[34] INVESTIGATION OF NEUTRON-IRRADIATION DAMAGE IN SILICON BY TRANSMISSION ELECTRON MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 101 - &

[35] TRANSIENT ANNEALING IN SEMICONDUCTOR DEVICES FOLLOWING PULSED NEUTRON IRRADIATION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) : 53 - +

[36] SANDER HH, 1964, SCR64192 SAND LAB RE

[37] SIGMUND P, 1967, SEP C SOL STAT RES A

[38] SIGMUND P, 1961, MAY C APPL ION BEAMS

[39] GAMMA IRRADIATION OF SILICON .2. LEVELS IN N-TYPE FLOAT-ZONE MATERIAL [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3295 - &

[40] SPEERS RR, 1968, IEEE T NUCL SCI, VNS15, P9

[31] Lindhard J., 1963, KGL DANSKE VIDENSKAB, V33

[32] MACKAY JW, 1968, RADIATION EFFECTS SE, P175

[33] OBSERVATION OF ION BOMBARDMENT DAMAGE IN SILICON [J]. PHILOSOPHICAL MAGAZINE, 1968, 17 (150): : 1145 - &

[34] INVESTIGATION OF NEUTRON-IRRADIATION DAMAGE IN SILICON BY TRANSMISSION ELECTRON MICROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) : 101 - &

[35] TRANSIENT ANNEALING IN SEMICONDUCTOR DEVICES FOLLOWING PULSED NEUTRON IRRADIATION [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) : 53 - +

[36] SANDER HH, 1964, SCR64192 SAND LAB RE

[37] SIGMUND P, 1967, SEP C SOL STAT RES A

[38] SIGMUND P, 1961, MAY C APPL ION BEAMS

[39] GAMMA IRRADIATION OF SILICON .2. LEVELS IN N-TYPE FLOAT-ZONE MATERIAL [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3295 - &

[40] SPEERS RR, 1968, IEEE T NUCL SCI, VNS15, P9