TRANSIENT ANNEALING IN SEMICONDUCTOR DEVICES FOLLOWING PULSED NEUTRON IRRADIATION

被引：35

作者：

SANDER, HH

GREGORY, BL

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1966年 / NS13卷 / 06期

关键词：

D O I：

10.1109/TNS.1996.4324346

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：53 / +

页数：1

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