INFLUENCE OF IMPURITIES ON CARRIER REMOVAL AND ANNEALING IN NEUTRON-IRRADIATED SILICON

被引：12

作者：

BASS, RF

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1967年 / NS14卷 / 06期

关键词：

D O I：

10.1109/TNS.1967.4324778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：78 / +

页数：1

共 10 条

[1] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J].

BEMSKI, G .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1195-1198

[2] DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J].

GOSSICK, BR .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1214-1218

[3]

HASIGUTI RR, 1965, 1964 P S RAD DAM SEM, P268

[4] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[5] GAMMA IRRADIATION OF SILICON .2. LEVELS IN N-TYPE FLOAT-ZONE MATERIAL [J].

SONDER, E ;

TEMPLETON, LC .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) :3295-&

[6] GAMMA IRRADIATION OF SILICON .3. LEVELS IN P-TYPE MATERIAL [J].

SONDER, E ;

TEMPLETO.LC .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) :1811-+

[7] HALL EFFECT MEASUREMENT OF RADIATION DAMAGE + ANNEALING IN SI [J].

TANAKA, T ;

INUISHI, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (02) :167-&

[8] ANNEALING STUDY IN ELECTRON-IRRADIATED N-TYPE SILICON [J].

TAUKE, RV ;

FARADAY, BJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) :5009-&

[9] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J].

WATKINS, GD ;

CORBETT, JW ;

WALKER, RM .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1198-1203

[10] DEFECTS IN IRRADIATED SILICON .1. ELECTRON SPIN RESONANCE OF SI-A CENTER [J].

WATKINS, GD ;

CORBETT, JW .

PHYSICAL REVIEW, 1961, 121 (04) :1001-&

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