ANNEALING STUDY IN ELECTRON-IRRADIATED N-TYPE SILICON

被引：5

作者：

TAUKE, RV

FARADAY, BJ

机构：

来源：

关键词：

D O I：

10.1063/1.1708194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5009 / &

共 10 条

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[9]

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[10]

VAVILOV VS, 1965, EFFECTS RADIATION SE, P149