GAMMA IRRADIATION OF SILICON .3. LEVELS IN P-TYPE MATERIAL

被引：38

作者：

SONDER, E

TEMPLETO.LC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 06期

关键词：

D O I：

10.1063/1.1714357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1811 / +

页数：1

共 22 条

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[4]

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[7]

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[9]

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