DISORDER PRODUCTION IN ION-IMPLANTED GALLIUM-ARSENIDE AT 40-K

被引：23

作者：

STEVANOVIC, DV

TOGNETTI, NP

CARTER, G

CHRISTODOULIDES, CE

IBRAHIM, AM

THOMPSON, DA

机构：

[1] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA

[2] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCS,ENGLAND

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1983年 / 71卷 / 1-2期

关键词：

D O I：

10.1080/00337578308218606

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：95 / 107

页数：13

共 21 条

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WEBB, R .

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CARTER, G ;

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HALE, EB .

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[5] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J].

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[6]

KOOL WH, 1976, NUCL INSTRUM METHODS, V132, P285, DOI 10.1016/0029-554X(76)90747-3

[7] PROSPECTS FOR ION-BOMBARDMENT AND ION-IMPLANTATION IN GAAS AND INP DEVICE FABRICATION [J].

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EISEN, FH ;

EZIS, A .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (04) :109-130

[8]

MULLER H, 1973, ION IMPLANTATION SEM, P203

[9] ELECTRICAL STUDIES OF LOW-TEMPERATURE NEUTRON- AND ELECTRON-IRRADIATED EPITAXIAL NORMAL-TYPE GAAS [J].

STEIN, HJ .

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[10]

STEIN HJ, 1971, 1ST P INT C ION IMPL, P17

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