FLUENCE DEPENDENCE OF DISORDER DEPTH PROFILES IN PB IMPLANTED SI

被引：10

作者：

CHRISTODOULIDES, CE ^{[1
]}

KADHIM, NJ ^{[1
]}

CARTER, G ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCASHIRE,ENGLAND

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 52卷 / 3-4期

关键词：

D O I：

10.1080/00337578008210035

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

收藏

页码：225 / 234

页数：10

相关论文

共 28 条

[1] BOGH E, 1971, 1ST P INT C ION IMPL, P51
[2] BOTTIGER J, 1972, ION IMPLANTATION SEM, P599
[3] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON
BROWER, KL
VOOK, FL
BORDERS, JA
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 208 - &
[4] ELECTRON-PARAMAGNETIC RESONANCE OF LATTICE DAMAGE IN OXYGEN-IMPLANTED SILICON
BROWER, KL
BEEZHOLD, W
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3499 - &
[5] CARTER G, RAD EFF, V37, P21
[6] CARTER G, 1979, RAD EFF LETT, V43, P1
[7] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING
DAVIES, JA
DENHARTO.J
ERIKSSON, L
MAYER, JW
[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4053 - &
[8] CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN ION-IMPLANTED SILICON - COMPOSITE MODEL
DENNIS, JR
HALE, EB
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) : 1119 - 1127
[9] EISEN FH, 1970, P EUROPEAN C ION IMP, P227
[10] EISEN FH, 1973, CHANNELING, P415