PROSPECTS FOR ION-BOMBARDMENT AND ION-IMPLANTATION IN GAAS AND INP DEVICE FABRICATION

被引:35
作者
MORGAN, DV [1 ]
EISEN, FH [1 ]
EZIS, A [1 ]
机构
[1] ROCKWELL INT, THOUSAND OAKS, CA 91360 USA
来源
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1981年 / 128卷 / 04期
关键词
ION BOMBARDMENT;
D O I
10.1049/ip-i-1.1981.0033
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The process of ion implantation and ion damage in GaAs and InP are considered. A survey of the basic physics of the implantation/damage processes is outlined together with studies on the annealing required to activate the ions for semiconductor doping. The prospects and current achievements of this technological process in device fabrication are discussed.
引用
收藏
页码:109 / 130
页数:22
相关论文
共 163 条
  • [1] EFFECT OF DUAL IMPLANTS INTO GAAS
    AMBRIDGE, T
    HECKINGBOTTOM, R
    BELL, EC
    SEALY, BJ
    STEPHENS, KG
    SURRIDGE, RK
    [J]. ELECTRONICS LETTERS, 1975, 11 (15) : 314 - 315
  • [2] LOW-TEMPERATURE ANNEALING BEHAVIOR OF GAAS IMPLANTED WITH BE
    ANDERSON, CL
    DUNLAP, HL
    [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 178 - 180
  • [3] FLUX AND FLUENCE DEPENDENCE OF IMPLANTATION DISORDER IN GAAS SUBSTRATES
    ANDERSON, WJ
    PARK, YS
    [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (08) : 4568 - 4570
  • [4] GALLIUM-ARSENIDE TRANSFERRED-ELECTRON DEVICES BY LOW-LEVEL ION-IMPLANTATION
    ANDERSON, WT
    DIETRICH, HB
    SWIGGARD, EW
    LEE, SH
    BARK, ML
    [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3175 - 3177
  • [5] Asbeck P. M., 1980, IEEE Electron Device Letters, VEDL-1, P35, DOI 10.1109/EDL.1980.25221
  • [6] RADIATION EFFECTS IN GAAS
    AUKERMAN, LW
    GRAFT, RD
    DAVIS, PW
    SHILLIDAY, TS
    [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) : 3590 - +
  • [7] ANNEALING OF ELECTRON-IRRADIATED GAAS
    AUKERMAN, LW
    GRAFT, RD
    [J]. PHYSICAL REVIEW, 1962, 127 (05): : 1576 - &
  • [8] BARNOSKI MK, 1974, APPL PHYS LETT, V24, P627, DOI 10.1063/1.1655081
  • [9] BENSON RB, 1976, ION IMPLANTATION SEM, P131
  • [10] CW OPERATION OF ION-IMPLANTED GAAS READ-TYPE IMPATT DIODES
    BERENZ, JJ
    YING, RS
    LEE, DH
    [J]. ELECTRONICS LETTERS, 1974, 10 (09) : 157 - 158