DOSE-RATE DEPENDENT ELECTRICAL ACTIVATION OF SILICON AND SULFUR IMPLANTED INTO GAAS

被引：8

作者：

MOORE, FG

DIETRICH, HB

机构：

[1] Naval Research Laboratory, Washington

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷

关键词：

D O I：

10.1016/0168-583X(91)95745-Y

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The electrical activation and mobility of silicon, the major n-type, ion-implanted dopant for GaAs, has been studied as a function of implantation dose rate (i.e. ion current density) at 100 keV for fluences from 5 x 10(12) to 3 x 10(14) cm-2. Systematic variations in both mobility and activation are documented for all fluences. These variations increase with the fluence. For a fluence of 10(14) cm-2, the Hall sheet carrier activation can increase by more than a factor of 2 when the ion current density is decreased from 100 x 10(-9) to 50 x 10(-9) A/cm2. Similar dose rate effects are also observed for a sulphur implant at 100 keV and a fluence of 4 x 10(14) cm-2.

引用

页码：978 / 980

页数：3

共 13 条

[1] APPLICATION OF LOW-ANGLE RUTHERFORD BACKSCATTERING AND CHANNELING TECHNIQUES TO DETERMINE IMPLANTATION INDUCED DISORDER PROFILE DISTRIBUTIONS IN SEMICONDUCTORS [J].