SILICON IMPLANTATION INTO GAAS - OBSERVATIONS OF DOSE-RATE DEPENDENT ELECTRICAL ACTIVATION AND DAMAGE

被引：30

作者：

MOORE, FG ^{[1
]}

DIETRICH, HB ^{[1
]}

DOBISZ, EA ^{[1
]}

HOLLAND, OW ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 09期

关键词：

D O I：

10.1063/1.103402

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical activation of ion-implanted silicon in GaAs has been studied as a function of dose rate (i.e., ion-current density). For a fluence of 1014 cm-2, the Hall sheet carrier activation is shown to depend strongly on the dose rate at which the implant was carried out. Carrier concentrations of 7×1018 cm-3 were produced at a 50×10-9 A/cm2 ion-current density. The variation in electrical activation is believed to be the result of a dose rate dependence of the ion-induced damage of GaAs which can be clearly seen in Rutherford backscattering (RBS) channeling measurements of 1015 cm-2 implants.

引用

页码：911 / 913

页数：3

共 25 条

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