THERMALLY STIMULATED CONDUCTIVITY IN SEMI-INSULATING GALLIUM-ARSENIDE AT LOW AND INTERMEDIATE ELECTRIC-FIELDS

被引：13

作者：

KULSHRESHTHA, AP ^{[1
]}

SAUNDERS, IJ ^{[1
]}

机构：

[1] LANCASTER UNIV,PHYS DEPT,LANCASTER LA1 4YB,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1975年 / 8卷 / 15期

关键词：

D O I：

10.1088/0022-3727/8/15/011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1787 / 1796

页数：10

共 14 条

[1] ELECTRIC FIELD EFFECTS IN TRAPPING PROCESSES [J].

DUSSEL, GA ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2797-&

[2]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[3]

Frenkel J., 1938, TECH PHYS USSR, V5, P685

[4] EFFECT OF ILLUMINATION TIME ON THERMALLY STIMULATED CURRENTS IN SEMI-INSULATING GAAS [J].

HAISTY, RW .

APPLIED PHYSICS LETTERS, 1967, 10 (01) :31-&

[5]

KULSHRESHTHA AP, 1966, SOV PHYS SOLID ST, V8, P287

[6] ELECTRICAL TRANSIENTS IN HIGH RESISTIVITY GALLIUM ARSENIDE [J].

NORTHROP, DC ;

THORNTON, PR ;

TREZISE, KE .

SOLID-STATE ELECTRONICS, 1964, 7 (01) :17-&

[7] NEGATIVE RESISTANCE AND HIGH ELECTRIC FIELD CAPTURE RATES IN SEMICONDUCTORS [J].

RIDLEY, BK ;

WATKINS, TB .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 :155-158

[8]

Rose A, 1963, CONCEPTS PHOTOCONDUC

[9] MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE [J].

RUCH, JG ;

KINO, GS .

APPLIED PHYSICS LETTERS, 1967, 10 (02) :40-&

[10] THERMALLY STIMULATED LUMINESCENCE AND CONDUCTIVITY OF INSULATORS [J].

SAUNDERS, IJ .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (12) :2181-+

← 1 2 →