EPR OBSERVATION OF ISOLATED INTERSTITIAL CARBON-ATOM IN SILICON

[1] Bean A. R., 1970, Solid State Communications, V8, P175, DOI 10.1016/0038-1098(70)90074-8

[2] Brelot A., 1971, RAD EFFECTS SEMICOND, P161

[3] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON [J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2607 - 2617

[4] FRIEDEL J, 1967, RADIATION EFFECTS SE

[5] NEWMAN RC, 1971, RAD EFFECTS SEMICOND, P155

[6] NEWMAN RC, 1973, INFRARED STUDIES CRY, P124

[7] STEIN HJ, 1967, B AM PHYS SOC, V12, P346

[8] STEIN HJ, 1969, RADIAT EFF, V1, P41

[9] INFRARED ABSORPTION BANDS IN CARBON- AD OXYGEN-DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1968, 13 (10) : 343 - &

[10] Watkins G. D., 1965, RAD DAMAGE SEMICONDU, P97

[1] Bean A. R., 1970, Solid State Communications, V8, P175, DOI 10.1016/0038-1098(70)90074-8

[2] Brelot A., 1971, RAD EFFECTS SEMICOND, P161

[3] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON [J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2607 - 2617

[4] FRIEDEL J, 1967, RADIATION EFFECTS SE

[5] NEWMAN RC, 1971, RAD EFFECTS SEMICOND, P155

[6] NEWMAN RC, 1973, INFRARED STUDIES CRY, P124

[7] STEIN HJ, 1967, B AM PHYS SOC, V12, P346

[8] STEIN HJ, 1969, RADIAT EFF, V1, P41

[9] INFRARED ABSORPTION BANDS IN CARBON- AD OXYGEN-DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1968, 13 (10) : 343 - &

[10] Watkins G. D., 1965, RAD DAMAGE SEMICONDU, P97