DEPOSITION AND HYDROGEN CONTENT OF CARBON-FILMS GROWN BY CH3+ ION-BEAM BOMBARDMENT

被引:15
作者
PLANK, H
WANG, W
ECKSTEIN, W
SCHWORER, R
STEFFEN, HJ
ROTH, J
机构
[1] Max-Planck-Institut für Plasmaphysik
关键词
D O I
10.1063/1.359717
中图分类号
O59 [应用物理学];
学科分类号
摘要
Carbon deposition and hydrogen codeposition is investigated as a function of ion energy, fluence, and target temperature at normal incidence by bombardment of silicon and pyrolitic graphite substrates with mass selected CH3+ molecules. An amorphous hydrogenated carbon layer (a-C:H) is formed in a thickness range of 40-130 nm at a fluence of 3x10(18)/cm(2). The deposition process, the re-erosion phenomenon, the hydrogen content, and the WC ratios of the carbon films are studied between 300 and 1000 K in the ion energy range from 150 eV to 3 keV. The experimental results are compared with those of TRIDYN computer simulations and previous experimental results of carbon sputtering by atomic H+ and C+ beams in order to obtain a better understanding of the interaction between hydrocarbon ions and the carbon-based wall materials in fusion devices. (C) 1995 American Institute of Physics.
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收藏
页码:5366 / 5372
页数:7
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