DESIGN CONSIDERATIONS FOR IMPROVING LOW-TEMPERATURE NOISE PERFORMANCE OF SILICON JFETS

被引：5

作者：

HASLETT, JW ^{[1
]}

KENDALL, EJM ^{[1
]}

SCHOLZ, FJ ^{[1
]}

机构：

[1] UNIV CALGARY, DEPT ELECT ENGN, CALGARY, ALBERTA, CANADA

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 02期

关键词：

D O I：

10.1016/0038-1101(75)90103-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：199 / 207

页数：9

共 9 条

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LAURITZEN, PO .

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[2] GERMANIUM FET - A NOVEL LOW-NOISE ACTIVE DEVICE [J].

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NAKAMURA, M .

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[3] TEMPERATURE DEPENDENCE OF LOW-FREQUENCY EXCESS NOISE IN JUNCTION-GATE FETS [J].

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KENDALL, EJM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (08) :943-+

[4]

HASLETT JW, 1973, INT ELECT C TORONTO

[5]

HASLETT JW, 1972, INT S NOISE

[6] LOW-FREQUENCY GENERATION NOISE IN JUNCTION FIELD EFFECT TRANSISTORS [J].

LAURITZEN, PO .

SOLID-STATE ELECTRONICS, 1965, 8 (01) :41-+

[7] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[8] THEORY OF LOW-FREQUENCY GENERATION NOISE IN JUNCTION-GATE FIELD-EFFECT TRANSISTORS [J].

SAH, CT .

PROCEEDINGS OF THE IEEE, 1964, 52 (07) :795-+

[9] CARRIER DENSITY FLUCTUATION NOISE IN FIELD-EFFECT TRANSISTORS [J].

VANDERZIEL, A .

PROCEEDINGS OF THE IEEE, 1963, 51 (11) :1671-&

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