PREFERENTIAL SPUTTERING OF ARGON ION-BOMBARDED NI3AL AND TASI2

被引:15
作者
HOFMANN, S
STEPANOVA, MG
机构
[1] RUSSIAN ACAD SCI,MV KELDYSH APPL MATH INST,MOSCOW 125047,RUSSIA
[2] MAX PLANCK INST MET RES,INST WERKSTOFFWISSENSCH,D-70174 STUTTGART,GERMANY
关键词
D O I
10.1016/0169-4332(95)00063-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The effect of the preferential sputtering of Ni3Al and TaSi2 under Ar+ ion bombardment in the energy range of 0.1-4.0 keV is studied by numerical solution of master equations for linear, binary-collision cascades. Results of the calculations are compared to the analytical theory of the preferential sputtering. By such a way, the field of application of the theory is elucidated. Calculations for both low-fluence and high-fluence cases are performed. Main features of composition-depth profiles generated in Ni3Al and TaSi2 by argon bombardment are briefly discussed.
引用
收藏
页码:227 / 233
页数:7
相关论文
共 26 条
[1]   STOICHIOMETRY EFFECTS AT NIMO SURFACES UNDER BOMBARDMENT WITH AR+ IONS FROM 40 TO 2000 EV [J].
BARTELLA, J ;
OECHSNER, H .
SURFACE SCIENCE, 1983, 126 (1-3) :581-588
[2]  
BETZ G, 1983, TOP APPL PHYS, V52, P11
[4]   SPUTTERING OF COSI(100) AND COSI2(100) SINGLE-CRYSTAL SURFACES [J].
CASTRO, GR ;
KUPPERS, J ;
IVASHCHENKO, Y .
APPLICATIONS OF SURFACE SCIENCE, 1983, 16 (3-4) :453-462
[5]   PREFERENTIAL SPUTTERING OF FESI(100) SINGLE-CRYSTAL SURFACES BY ARGON, NEON, AND KRYPTON ION-BOMBARDMENT [J].
CASTRO, GR ;
BALLESTEROS, A .
SURFACE SCIENCE, 1988, 204 (03) :415-427
[6]   AN AES STUDY OF THE ROOM-TEMPERATURE OXIDATION OF TASIX AFTER BOMBARDMENT WITH AR+IONS OF DIFFERENT ENERGIES [J].
CLEMENT, M ;
SANZ, JM ;
MARTINEZDUART, JM .
SURFACE AND INTERFACE ANALYSIS, 1990, 15 (07) :440-446
[7]   COMPUTER-SIMULATION OF PREFERENTIAL SPUTTERING [J].
ECKSTEIN, W ;
MOLLER, W .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :727-734
[8]   COMPUTER-SIMULATION OF 2-COMPONENT TARGET SPUTTERING [J].
ECKSTEIN, W ;
BIERSACK, JP .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1985, 37 (02) :95-108
[9]  
ECKSTEIN W, 1993, COMMUNICATION
[10]  
ECKSTEIN W, 1991, SPRINGER SERIES MATE, V10, P84