PLAN-VIEW TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF A CRACK-TIP IN SILICON

被引：37

作者：

SAKA, H

NAGAYA, G

机构：

[1] Department of Quantum Engineering, Nagoya University, Nagoya

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1995年 / 72卷 / 04期

关键词：

D O I：

10.1080/09500839508242459

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A focused-ion-beam system has been applied to prepare a thin foil specimen of silicon which contained cracks in the plane of the foil. It was possible to observe a much larger area at and near a crack tip than has been hitherto possible. The crack formation around a Vickers indent appears to be much more complicated than has been supposed.

引用

页码：251 / 255

页数：5

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