CURRENT VOLTAGE CHARACTERISTICS OF BEND IN MESOSCOPIC WIRE

被引:5
作者
THORNTON, TJ
YAMADA, S
YAMAMOTO, M
AIHARA, K
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN
[2] UNIV LONDON IMPERIAL COLL SCI & TECHNOL, DEPT ELECT ENGN, LONDON SW7 2BT, ENGLAND
关键词
TRANSPORT PROCESSES; ELECTRON MOBILITY; RESISTANCE; SEMICONDUCTOR MATERIALS;
D O I
10.1049/el:19910734
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The four terminal resistance of a bend in a mesoscopic wire changes sign with increasing temperature. This transition leads to a nonlinear I/V characteristic which can, under suitable bias conditions, be used to produce frequency doubling.
引用
收藏
页码:1177 / 1178
页数:2
相关论文
共 4 条
  • [1] POTENTIAL FLUCTUATIONS IN HETEROSTRUCTURE DEVICES
    NIXON, JA
    DAVIES, JH
    [J]. PHYSICAL REVIEW B, 1990, 41 (11): : 7929 - 7932
  • [2] NONLOCAL QUANTUM TRANSPORT IN NARROW MULTIBRANCHED ELECTRON WAVE GUIDE OF GAAS-ALGAAS
    TAKAGAKI, Y
    GAMO, K
    NAMBA, S
    ISHIDA, S
    TAKAOKA, S
    MURASE, K
    ISHIBASHI, K
    AOYAGI, Y
    [J]. SOLID STATE COMMUNICATIONS, 1988, 68 (12) : 1051 - 1054
  • [3] TAKAGAKI Y, 1990, JPN J APPL PHYS, V29, P192
  • [4] ONE-DIMENSIONAL CONDUCTION IN THE 2D ELECTRON-GAS OF A GAAS-ALGAS HETEROJUNCTION
    THORNTON, TJ
    PEPPER, M
    AHMED, H
    ANDREWS, D
    DAVIES, GJ
    [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (11) : 1198 - 1201