SURFACE PHONON-DISPERSION CURVES IN GAAS(110) AND GE(111)2X1 - A CRITICAL COMPARISON

被引：25

作者：

SANTINI, P

MIGLIO, L

BENEDEK, G

RUGGERONE, P

机构：

[1] UNIV MILAN,DIPARTMENTO FIS,I-20133 MILAN,ITALY

[2] MAX PLANCK INST STROMUNGSFORSCH,W-3400 GOTTINGEN,GERMANY

来源：

SURFACE SCIENCE | 1991年 / 241卷 / 03期

关键词：

D O I：

10.1016/0039-6028(91)90094-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We compare the surface phonon dispersion curves of GaAs(110) and Ge(111)2 x 1 as calculated by the Bond Charge Model. The atomic masses, bulk force constants and crystallography of the topmost layer are nearly equal, still the substrate orientation and charge distributions are different. Similarities and discrepancies in the surface phonon dispersion curves are investigated as fingerprints of the structure configuration.

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页码：346 / 352

页数：7

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