CRYSTALLINE AS2SE3 - ELECTRONIC AND GEOMETRIC STRUCTURE

被引:35
作者
TARNOW, E
ANTONELLI, A
JOANNOPOULOS, JD
机构
来源
PHYSICAL REVIEW B | 1986年 / 34卷 / 06期
关键词
D O I
10.1103/PhysRevB.34.4059
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:4059 / 4073
页数:15
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共 30 条
[1]   STUDIES OF THE FINE-STRUCTURE OF THE DIRECT GAP OF AS2SE3 SINGLE-CRYSTALS BY ELECTROREFLECTANCE [J].
ALTHAUS, HL ;
WEISER, G .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 99 (02) :537-545
[2]   ELECTROABSORPTION ON THE INDIRECT GAP OF AS2SE3 [J].
ALTHAUS, HL ;
WEISER, G .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 99 (01) :277-284
[3]   OPTICAL-SPECTRA AND BAND-STRUCTURE OF AS2SE3 [J].
ALTHAUS, HL ;
WEISER, G ;
NAGEL, S .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 87 (01) :117-128
[4]   MEAN-VALUE POINT IN BRILLOUIN ZONE [J].
BALDERESCHI, A .
PHYSICAL REVIEW B, 1973, 7 (12) :5212-5215
[5]   DENSITIES OF VALENCE STATES OF AMORPHOUS AND CRYSTALLINE AS2S3, AS2SE3, AND AS2TE3 - X-RAY PHOTOEMISSION AND THEORY [J].
BISHOP, SG ;
SHEVCHIK, NJ .
PHYSICAL REVIEW B, 1975, 12 (04) :1567-1578
[6]   ELECTRONIC-STRUCTURE OF ARSENIC CHALCOGENIDES [J].
BULLETT, DW .
PHYSICAL REVIEW B, 1976, 14 (04) :1683-1692
[7]   SPECIAL POINTS IN BRILLOUIN ZONE [J].
CHADI, DJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753
[9]  
GUBANOV AI, 1974, SOV PHYS SEMICOND+, V8, P457
[10]   NORM-CONSERVING PSEUDOPOTENTIALS [J].
HAMANN, DR ;
SCHLUTER, M ;
CHIANG, C .
PHYSICAL REVIEW LETTERS, 1979, 43 (20) :1494-1497