MACROSCOPIC PHYSICS OF THE SILICON INVERSION LAYER

被引：256

作者：

ANCONA, MG ^{[1
]}

TIERSTEN, HF ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT MECH ENGN,TROY,NY 12181

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.35.7959

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7959 / 7965

页数：7

共 7 条

[1] FULLY MACROSCOPIC DESCRIPTION OF ELECTRICAL-CONDUCTION IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES
ANCONA, MG
TIERSTEN, HF
[J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7018 - 7045
[2] FULLY MACROSCOPIC DESCRIPTION OF BOUNDED SEMICONDUCTORS WITH AN APPLICATION TO THE SI-SIO2 INTERFACE
ANCONA, MG
TIERSTEN, HF
[J]. PHYSICAL REVIEW B, 1980, 22 (12) : 6104 - 6119
[3] GREEN AE, 1964, ARCH RATION MECH AN, V16, P325
[4] ANALYTIC APPROXIMATIONS FOR FERMI ENERGY OF AN IDEAL FERMI GAS
JOYCE, WB
DIXON, RW
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 354 - 356
[5] STERN F, 1974, CRIT REV SOLID STATE, V5, P499
[6] TIERSTEN HF, 1974, RD MINDLIN APPL MECH, P67
[7] Toupin R, 1962, ARCH RATION MECH AN, V11, P385, DOI DOI 10.1007/BF00253945