SELECTIVE EPITAXIAL-GROWTH OF SILICON IN PANCAKE REACTORS

被引：14

作者：

KASTELIC, M ^{[1
]}

OH, I ^{[1
]}

TAKOUDIS, CG ^{[1
]}

FRIEDRICH, JA ^{[1
]}

NEUDECK, GW ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

CHEMICAL ENGINEERING SCIENCE | 1988年 / 43卷 / 08期

关键词：

We thank J. Denton and M. Young for technical assistance and Dr. M. Vavalii for assistance in the implementation and use of the code ELLPACK. This work was supported in part by Delco Electronics and the Semiconductor Research Corporation (Contract No. 87-SJ-108);

D O I：

10.1016/0009-2509(88)87080-5

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

引用

页码：2031 / 2036

页数：6

共 16 条

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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2911 - 2917
[9] KASTELIC M, 1988, THESIS PURDUE U
[10] CRYSTALLINE DEFECTS IN SELECTIVELY EPITAXIAL SILICON LAYERS
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ISHITANI, A
ENDO, N
TANNO, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (12): : L783 - L785

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