IMPROVED LIFETIMES OF (GAAL)AS VISIBLE (740 NM) LASERS BY REDUCING BONDING STRESS

被引:10
作者
HAYAKAWA, T
MIYAUCHI, N
YAMAMOTO, S
HAYASHI, H
YANO, S
HIJIKATA, T
机构
关键词
D O I
10.1063/1.93751
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:23 / 24
页数:2
相关论文
共 11 条
[1]   LONG-LIVED (GAAL)AS DH LASERS BONDED WITH IN PRODUCED BY ELIMINATING DETERIORATION OF IN SOLDER [J].
HAYAKAWA, T ;
YAMAMOTO, S ;
MATSUI, S ;
SAKURAI, T ;
HIJIKATA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05) :725-727
[2]   HIGHLY RELIABLE AND MODE-STABILIZED OPERATION IN V-CHANNELED SUBSTRATE INNER STRIPE LASERS ON P-GAAS SUBSTRATE EMITTING IN THE VISIBLE WAVELENGTH REGION [J].
HAYAKAWA, T ;
MIYAUCHI, N ;
YAMAMOTO, S ;
HAYASHI, H ;
YANO, S ;
HIJIKATA, T .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7224-7234
[3]  
HAYAKAWA T, UNPUB
[4]   DEGRADATION MECHANISMS OF GA1-XALX AS VISIBLE DIODE-LASERS [J].
KAJIMURA, T .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :908-913
[5]   RED-LIGHT-EMITTING LASER-DIODES OPERATING CW AT ROOM-TEMPERATURE [J].
KRESSEL, H ;
HAWRYLO, FZ .
APPLIED PHYSICS LETTERS, 1976, 28 (10) :598-600
[6]   INTERNAL-STRESS AND DEGRADATION IN SHORT-WAVELENGTH AIGAAS DOUBLE-HETEROJUNCTION DEVICES [J].
LADANY, I ;
FURMAN, TR ;
MARINELLI, DP .
ELECTRONICS LETTERS, 1979, 15 (12) :342-343
[7]   CALCULATED STRESSES IN MULTILAYERED HETEROEPITAXIAL STRUCTURES [J].
OLSEN, GH ;
ETTENBERG, M .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (06) :2543-2547
[8]   IMPROVEMENT IN OPERATION LIVES OF GAALAS VISIBLE LASERS BY INTRODUCING GAALAS BUFFER LAYERS [J].
SHIMIZU, H ;
ITOH, K ;
WADA, M ;
SUGINO, T ;
TERAMOTO, I .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :763-767
[9]   VERY LOW THRESHOLD VISIBLE TS LASERS [J].
WADA, M ;
ITOH, K ;
SHIMIZU, H ;
SUGINO, T ;
TERAMOTO, I .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :776-780
[10]   VISIBLE GAALAS V-CHANNELED SUBSTRATE INNER STRIPE LASER WITH STABILIZED MODE USING P-GAAS SUBSTRATE [J].
YAMAMOTO, S ;
HAYASHI, H ;
YANO, S ;
SAKURAI, T ;
HIJIKATA, T .
APPLIED PHYSICS LETTERS, 1982, 40 (05) :372-374