INTERNAL-STRESS AND DEGRADATION IN SHORT-WAVELENGTH AIGAAS DOUBLE-HETEROJUNCTION DEVICES

被引：8

作者：

LADANY, I

FURMAN, TR

MARINELLI, DP

机构：

[1] RCA Laboratories Princeton

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 12期

关键词：

Aging; Semiconductor junction lasers;

D O I：

10.1049/el:19790243

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aging tests of incoherently operated zinc-doped double-heterojunction (d.h.)lasers designed for short-wavelength (0·71–0B7;72 µm)operation show that the introduction of buffer layers between the substrate and the d.h. structure leads to a drastic reduction in gradual degradation. This is attributed to a decrease in lattice mismatch stress. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：342 / 343

页数：2

共 8 条

[1] ACCELERATED AGING AND A UNIFORM MODE OF DEGRADATION IN (AI,GA) AS DOUBLE-HETEROSTRUCTURE LASERS [J].