ALUMINUM-SILICON SCHOTTKY BARRIERS AS SEMICONDUCTOR TARGETS FOR EBS DEVICES

被引：5

作者：

NAMORDI, MR ^{[1
]}

THOMPSON, HW ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

关键词：

D O I：

10.1016/0038-1101(75)90025-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：499 / &

共 26 条

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