MINIMUM SILICON-WAFER THICKNESS FOR ID WAFERING

被引:4
作者
CHEN, CP
机构
关键词
D O I
10.1149/1.2123688
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:2835 / 2837
页数:3
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  • [1] CHEN CP, 1980, AM CERAM SOC BULL, V59, P469
  • [2] DYER LD, 1982, 5101187 JET PROP LAB, P269
  • [3] KOBAYASHI AS, 1976, 2ND P INT C MECH BEH, P1073
  • [4] ID-DIAMOND-SAWING DAMAGE TO GERMANIUM AND SILICON
    MEEK, RL
    HUFFSTUTLER, MC
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (06) : 893 - +
  • [5] CONTROLLED SURFACE FLAWS IN HOT-PRESSED SI3N4
    PETROVIC, JJ
    JACOBSON, LA
    TALTY, PK
    VASUDEVAN, AK
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1975, 58 (3-4) : 113 - 116
  • [6] YOO HI, 1978, DOEJPL954830782 OPT