ID-DIAMOND-SAWING DAMAGE TO GERMANIUM AND SILICON

The surface damage associated with watering of germanium and silicon using an ID-saw has been investigated. Well-defined damage layers, which consist principally of microcracks and which have a depth of 25 ±5μ in ger manium and 50 ±10μ in silicon, were observed for a range of sawing param eters. In no case was there evidence to suggest bulk damage to the mate rials. On the basis of vibration studies of the specimen and ID-blade, out of plane blade vibrations and periodic abrasive contact (due to noncircularity of the center hole in the blade) appear to be the important damage mechanisms. © 1969, The Electrochemical Society, Inc. All rights reserved.