DETERMINATION OF THE ENERGY BARRIER FOR STRUCTURAL RELAXATION IN AMORPHOUS SI AND GE BY RAMAN-SCATTERING

被引:75
作者
TSU, R
GONZALEZHERNANDEZ, J
POLLAK, FH
机构
[1] CUNY BROOKLYN COLL,BROOKLYN,NY 11210
[2] CUNY,CTR UNIV,NEW YORK,NY 10036
[3] CUNY,GRAD SCH,DEPT PHYS,NEW YORK,NY 10036
[4] INST FIS & QUIM SAO CARLOS,SAO CARLOS,SP,BRAZIL
关键词
D O I
10.1016/0038-1098(85)90947-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:447 / 450
页数:4
相关论文
共 20 条
[1]  
BEEMAN D, COMMUNICATION
[2]  
Brodsky M. H., 1975, Light scattering in solids, P205
[3]   STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J].
CERDEIRA, F ;
BUCHENAUER, CJ ;
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :580-+
[4]   NUCLEATION AND GROWTH-RATE OF ALPHA-SI ALLOYS [J].
GONZALEZHERNANDEZ, J ;
TSU, R .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :90-92
[5]   CALCULATION OF PHONON DENSITY OF STATES FOR AMORPHOUS SI [J].
ISHII, N ;
KUMEDA, M ;
SHIMIZU, T .
SOLID STATE COMMUNICATIONS, 1984, 50 (04) :367-370
[6]   STRUCTURAL ORDER AND OPTICAL-PROPERTIES OF TETRAHEDRAL AMORPHOUS SOLIDS [J].
MALEY, N ;
PILIONE, LJ ;
KSHIRSAGAR, ST ;
LANNIN, JS .
PHYSICA B & C, 1983, 117 (MAR) :880-882
[7]   VIBRATIONAL-SPECTRUM AND ORDER OF LASER-QUENCHED AMORPHOUS-SILICON [J].
MALEY, N ;
LANNIN, JS ;
CULLIS, AG .
PHYSICAL REVIEW LETTERS, 1984, 53 (16) :1571-1573
[8]   ELEASTIC PROPERTIES OF ZNS STRUCTURE SEMICONDUCTORS [J].
MARTIN, RM .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (10) :4005-+
[9]   ORDERING OF AMORPHOUS-GERMANIUM PRIOR TO CRYSTALLIZATION [J].
PAESLER, MA ;
SAYERS, DE ;
TSU, R ;
GONZALEZHERNANDEZ, J .
PHYSICAL REVIEW B, 1983, 28 (08) :4550-4557
[10]   RELATIONSHIP BETWEEN BOND ANGLE DISORDER AND THE OPTICAL EDGE OF A-GE-H [J].
PERSANS, PD ;
RUPPERT, AF ;
CHAN, SS ;
CODY, GD .
SOLID STATE COMMUNICATIONS, 1984, 51 (04) :203-207