DARK CURRENT TRANSPORT MECHANISM OF P-I-N HYDROGENATED AMORPHOUS-SILICON DIODES

被引：35

作者：

MATSUURA, H

MATSUDA, A

OKUSHI, H

TANAKA, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 04期

关键词：

D O I：

10.1063/1.336044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1578 / 1583

页数：6

共 33 条

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