ION-IMPLANTATION DAMAGE IN CDS

被引：19

作者：

PARIKH, NR

THOMPSON, DA

CARPENTER, GJC

机构：

[1] MCMASTER UNIV,INST MAT RES,HAMILTON L8S 4M1,ONTARIO,CANADA

[2] ENERGY MINES & RESOURCES CANADA,OTTAWA K1A 0G1,ONTARIO,CANADA

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1986年 / 98卷 / 1-4期

关键词：

D O I：

10.1080/00337578608206119

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：289 / 300

页数：12

共 27 条

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[2]

ARMITAGE SA, 1970, P EUROPEAN C ION IMP, P138

[3]

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[4] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].

BOGH, E .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :653-&

[5] HIGH CONDUCTIVITY P-TYPE CDS [J].

CHERNOW, F ;

ELDRIDGE, G ;

RUSE, G ;

WAHLIN, L .

APPLIED PHYSICS LETTERS, 1968, 12 (10) :339-&

[6]

ELSBY CN, 1971, THESIS AIR FORCE I T

[7] ELECTRON MICROSCOPE STUDY OF RADIATION DAMAGE IN BISMUTH ION-IMPLANTED CDS [J].

GOVIND, PK ;

FRAIKOR, FJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (06) :2476-&

[8] A STUDY OF EXTENDED DEFECTS IN CDS SINGLE-CRYSTALS BY HE+ BACKSCATTERING EXPERIMENTS [J].

GRIGOREV, AN ;

NIKOLAJCHUK, LI ;

KHIZHNYAK, NA .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1985, 84 (3-4) :291-299

[9]

GRIGOREV AN, 1974, SOV PHYS SEMICOND, V9, P757

[10] PHOTOELECTRONIC PROPERTIES OF ION-IMPLANTED CDS [J].

HOU, SL ;

MARLEY, JA .

APPLIED PHYSICS LETTERS, 1970, 16 (11) :467-&

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