PERFORMANCE IMPROVEMENT OF CIRCULAR-GRATING SURFACE-EMITTING DBR LASERS USING AN MQW STRUCTURE WITH ETCH-STOP LAYER

被引：5

作者：

FALLAHI, M ^{[1
]}

DION, M ^{[1
]}

WASILEWSKI, Z ^{[1
]}

BUCHANAN, M ^{[1
]}

NOURNIA, M ^{[1
]}

STAPLEDON, J ^{[1
]}

BARBER, R ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA,ON K1A 0R6,CANADA

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 18期

关键词：

VERTICAL CAVITY SURFACE EMITTING LASERS; DISTRIBUTED BRAGG REFLECTOR LASERS;

D O I：

10.1049/el:19951045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors demonstrate low threshold current high efficiency operation of circular-grating surface-emitting distributed Bragg reflector (CG-SE-DBR) lasers. A strained InGaAsIGaAs triple quantum well with an etch-stop layer was grown by MBE. Circular gratings are defined by electron beam lithography. A threshold current as low as 17 mA and a pulsed output power > 170 mW at similar to 980 nm wavelength are obtained.

引用

页码：1581 / 1582

页数：2

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