THE ELECTRONIC-STRUCTURE OF HEAVILY DOPED ION-IMPLANTED LASER ANNEALED SILICON - ELLIPSOMETRIC MEASUREMENTS

被引：6

作者：

VINA, L ^{[1
]}

UMBACH, C ^{[1
]}

COMPAAN, A ^{[1
]}

CARDONA, M ^{[1
]}

AXMANN, A ^{[1
]}

机构：

[1] FRAUNHOFER INST ANGEW FESKORPERPHYS,D-7800 FREIBURG,FED REP GER

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-5期

关键词：

D O I：

10.1051/jphyscol:1983532

中图分类号：

学科分类号：

摘要：

引用

页码：203 / 208

页数：6

共 18 条

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